Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors<xref ref-type="fn" rid="cpb151428fn1">*</xref>

Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors*

Luo Jun^a), Zhao Sheng-Lei^a), Mi Min-Han^a), Hou Bin^b), Yang Xiao-Lei^b), Zhang Jin-Cheng^a), Ma Xiao-Hua^a),^b), Hao Yue^a)

Conductance as a function of radial frequency for (a) nonrecessed HEMT, (b) recessed-gate HEMT, and (c) annealed HEMT at selected gate biases. Full lines are fitting curves.