Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors<xref ref-type="fn" rid="cpb151428fn1">*</xref>

Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors*

Luo Jun^a), Zhao Sheng-Lei^a), Mi Min-Han^a), Hou Bin^b), Yang Xiao-Lei^b), Zhang Jin-Cheng^a), Ma Xiao-Hua^a),^b), Hao Yue^a)

Transfer characteristics of the nonrecessed AlGaN/GaN HEMT, recessed-gate AlGaN/GaN HEMT, and annealed AlGaN/GaN HEMT at V _DS = 5 V. The annealed HEMT refers to the recessed-gate HEMT treated by post-gate annealing at 350 °C for 10 min.