Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface<xref ref-type="fn" rid="cpb151083fn1">*</xref>

Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface*

Han Chao^a), Zhang Yu-Ming^a), Song Qing-Wen^a),^b), Tang Xiao-Yan^a), Zhang Yi-Men^a), Guo Hui^a), Wang Yue-Hu^a)

Plan-view SEM images of (a) the clean SiC surface before annealing, as well as the annealed Ti/Al based contact surfaces after chemical etching, (b) Ti(100 nm)/Al(100 nm) annealed at 1000 °C for 3 min, (c) Ti(100 nm)/Al(100 nm) annealed at 900 °C for 5 min, and (d) Ti(100 nm)/Al(100 nm)/Ti(50 nm) annealed at 1000 °C for 3 min.