Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface<xref ref-type="fn" rid="cpb151083fn1">*</xref>

Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface*

Han Chao^a), Zhang Yu-Ming^a), Song Qing-Wen^a),^b), Tang Xiao-Yan^a), Zhang Yi-Men^a), Guo Hui^a), Wang Yue-Hu^a)

Optical microscopy images of the annealed Ti/Al based contact surfaces. (a) Ti(100 nm)/Al(100 nm) after annealing at 1000 °C for 3 min, (b) Ti(100 nm)/Al(100 nm) after annealing at 900 °C for 5 min, and (c) Ti(100 nm)/Al(100 nm)/Ti(50 nm) after annealing at 1000 °C for 3 min. The as-deposited contact morphology for both the bilayer and triplelayer system are shown in the insets of panels (b) and (c), respectively.