Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface<xref ref-type="fn" rid="cpb151083fn1">*</xref>

Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface*

Han Chao^a), Zhang Yu-Ming^a), Song Qing-Wen^a),^b), Tang Xiao-Yan^a), Zhang Yi-Men^a), Guo Hui^a), Wang Yue-Hu^a)

TLM fitting curve of Ti(100 nm)/Al(100 nm) ohmic contact after annealing at 1000 °C for 3 min. The SCR is calculated according to ρ _C , where R _sh is the bulk sheet resistance of the p⁺ epilayer, R _C is the contact resistance, L _T is the transfer line length, and W is the pad width.