Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface<xref ref-type="fn" rid="cpb151083fn1">*</xref>

Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface*

Han Chao^a), Zhang Yu-Ming^a), Song Qing-Wen^a),^b), Tang Xiao-Yan^a), Zhang Yi-Men^a), Guo Hui^a), Wang Yue-Hu^a)

Doping profile of the epitaxial p⁺ layer measured with SIMS.