Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors<xref ref-type="fn" rid="cpb150462fn1">*</xref>

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors*

Yang Ming^a),^b), Lin Zhao-Jun^a), Zhao Jing-Tao^a), Wang Yu-Tang^a), Li Zhi-Yuan^a), Lv Yuan-Jie^b), Feng Zhi-Hong^b)

For 300 μm thinned substrate, (a) ON/OFF drain current ratio I _ON/ I _OFF and (b) subthreshold swing variations with V _sub. Both of them demonstrate a greater improvement of switching characteristics with the increase of the substrate bias.