Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors<xref ref-type="fn" rid="cpb150462fn1">*</xref>

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors*

Yang Ming^a),^b), Lin Zhao-Jun^a), Zhao Jing-Tao^a), Wang Yu-Tang^a), Li Zhi-Yuan^a), Lv Yuan-Jie^b), Feng Zhi-Hong^b)

For 300 μm thinned substrate, the measured I _DS at V _DS = 8 V as a function of V _GS under different substrate voltage biases V _sub. The inset shows I _DS at V _DS = 8 V and V _GS = −8 V as a fuction of V _sub. Comparing with the original one (Fig. 2 ), the influence of the substrate bias becomes greater.