Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors<xref ref-type="fn" rid="cpb150462fn1">*</xref>

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors*

Yang Ming^a),^b), Lin Zhao-Jun^a), Zhao Jing-Tao^a), Wang Yu-Tang^a), Li Zhi-Yuan^a), Lv Yuan-Jie^b), Feng Zhi-Hong^b)

Schematic cross section of the fabricated AlGaN/AlN/GaN HFET with the deposited substrate metal (Ni/Au) electrode.