Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer<xref ref-type="fn" rid="cpb150949fn1">*</xref>

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer*

Li Xiao-Jing, Zhao De-Gang, Jiang De-Sheng, Chen Ping, Zhu Jian-Jun, Liu Zong-Shun, Le Ling-Cong, Yang Jing, He Xiao-Guang

The specific contact resistivity ( ρ _c) and p-type resistivity ( ρ _p) as a function of the Cp₂Mg flow rate of p⁺⁺-InGaN layer at room temperature.