Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer |
The specific contact resistivity ( ρ c) as a function of the thickness of p++-InGaN layer. The inset shows the schematic energy band diagrams of Ni/Au/p++-InGaN/p++-GaN/p-GaN. |