Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer*
Li Xiao-Jing, Zhao De-Gang, Jiang De-Sheng, Chen Ping, Zhu Jian-Jun, Liu Zong-Shun, Le Ling-Cong, Yang Jing, He Xiao-Guang
       
The specific contact resistivity ( ρ c) as a function of the thickness of p++-InGaN layer. The inset shows the schematic energy band diagrams of Ni/Au/p++-InGaN/p++-GaN/p-GaN.