Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer<xref ref-type="fn" rid="cpb150949fn1">*</xref>

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer*

Li Xiao-Jing, Zhao De-Gang, Jiang De-Sheng, Chen Ping, Zhu Jian-Jun, Liu Zong-Shun, Le Ling-Cong, Yang Jing, He Xiao-Guang

CTLM I – V measurement for four samples with different thicknesses of p⁺⁺-InGaN layer when the spacing of the CTLM pattern is fixed at 30 μm at room temperature. The inset shows the structure diagram of the compound contact layer for Ni/Au Ohmic contact to p-GaN.