Carrier behavior of HgTe under high pressure revealed by Hall effect measurement*
Hu Ting-Jinga),b), Cui Xiao-Yana), Li Xue-Feia), Wang Jing-Shua), Lv Xiu-Meia), Wang Ling-Shenga), Yang Jing-Haia), Gao Chun-Xiaob)
       
(a) Hall coefficient, (b) carrier concentration, (c) mobility of HgTe under high pressure.