Carrier behavior of HgTe under high pressure revealed by Hall effect measurement*
Hu Ting-Jinga),b), Cui Xiao-Yana), Li Xue-Feia), Wang Jing-Shua), Lv Xiu-Meia), Wang Ling-Shenga), Yang Jing-Haia), Gao Chun-Xiaob)
       
Completed microcircuit on diamond anvil (left) and DAC configuration for Hall effect measurement (right). 1: Mo, 2: alumina layer, 3: sample chamber, 4: ruby. A , B , C , and D are the contact ends of the microcircuit.