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In situ electrical transport measurementof superconductive ultrathin films*
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Liu Can-Hua a),b) , Jia Jin-Feng a),b)
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Results of in situ 4PP transport measurement on single-layer FeSe/STO.[ 8 , 40 ] (a) Linear I – V curves recorded between each 4PP tip and the FeSe/STO sample, indicating nearly Ohmic contacts. (b) Temperature dependence of zero-bias resistance measured at different tip locations. Inset is some typical 4PP I – V curves recorded at around 110 K. (c) Temperature dependence of critical current. The solid curve is a fit to Eq. ( 6 ). |
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