GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE

Zheng Xin-He†^a),^b), Liu San-Jie^a), Xia Yu^a), Gan Xing-Yuan^b), Wang Hai-Xiao^b), Wang Nai-Ming^b), Yang Hui^b)

(a) Optical (200X) and (b) atomic force microscopy images (scanning area: 1 μm × 1 μm) of Mg-doped GaAs layers on a GaAs substrate, (c) x-ray diffraction profile of Te-doped GaAs layer. The inset shows the lattice constants of the Te-doped samples as a function of Te concentration measured by SIMS. The lattice constant of GaAs substrate is indicated as a dot line.