Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

Chen Qing-Tao, Huang Yong-Qing†, Fei Jia-Rui, Duan Xiao-Feng, Liu Kai, Liu Feng, Kang Chao, Wang Jun-Chu, Fang Wen-Jing, Ren Xiao-Min

Dark current versus the reverse bias voltage at a stable room temperature of 300 K. The inset graph shows the variation of dark current with the reverse bias voltage from 0 V to 11 V. The dark current is 7.874 nA at a reverse bias voltage of 3 V.