Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

Chen Qing-Tao, Huang Yong-Qing†, Fei Jia-Rui, Duan Xiao-Feng, Liu Kai, Liu Feng, Kang Chao, Wang Jun-Chu, Fang Wen-Jing, Ren Xiao-Min

Top view optical micrograph of the fabricated InGaAs/InP uni-traveling-carrier photodetector and partially enlarged drawing (right graph).