Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity
Chen Qing-Tao, Huang Yong-Qing†, Fei Jia-Rui, Duan Xiao-Feng, Liu Kai, Liu Feng, Kang Chao, Wang Jun-Chu, Fang Wen-Jing, Ren Xiao-Min
       
Variations of doping concentration with depth on 640-nm In0.53Ga0.47As absorption layer (solid red circle at the left) and 500-nm InP depletion layer (solid blue circle at the right) of the device.