A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric
Krishna Saramekala Gopia) , Dubey Sarveshb) , Kumar Tiwari Pramod†a) 
A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric |
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Krishna Saramekala Gopi
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| Threshold voltages versus gate length for buried oxide thickness values. The other device parameters are the same as those in Fig. 3 . |
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