A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric
Krishna Saramekala Gopia) , Dubey Sarveshb) , Kumar Tiwari Pramod†a) 
A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric |
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Krishna Saramekala Gopi
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| Surface potentials versus the channel length in front and back channel. The other device parameters are: ϕ M = 4.8 eV, N a = 1016 cm−3, N d = 1020 cm−3, t box = 200 nm, t Si = 8 nm, t rsd = 30 nm, ε k = 22, V GS = 0.1 V, V DS = 0.1 V. |
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