A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high-<em> k</em> dielectric

A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric

Krishna Saramekala Gopi^a), Dubey Sarvesh^b), Kumar Tiwari Pramod†^a)

Potential due to uniformly surface-charged plate.