A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric
Krishna Saramekala Gopia), Dubey Sarveshb), Kumar Tiwari Pramod†a)
       
Schematic structure of the Re-S/D FD SOI MOSFET, showing the internal parasitic fringe capacitance.