A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high-
k
dielectric
Krishna Saramekala Gopi
a)
, Dubey Sarvesh
b)
, Kumar Tiwari Pramod†
a)
Schematic structure of the Re-S/D FD SOI MOSFET, showing the internal parasitic fringe capacitance.