Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

Wu Shao-Hang^a),^b), Zhang Nan^a), Hu Yong-Sheng^a), Chen Hong^c), Jiang Da-Peng^a), Liu Xing-Yuan†^a)

(a) AFM image of untreated ZnO film. (b) AFM image of ZnO film annealed at 250 °C. (c) AFM image of untreated SrZnO film. (d) AFM image of SrZnO film annealed at 250 °C. (e) XRD patterns for the different samples.