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Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors
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Wu Shao-Hang a),b), Zhang Nan a), Hu Yong-Sheng a), Chen Hong c), Jiang Da-Peng a), Liu Xing-Yuan† a) |
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| (a) Transfer characteristics for the SrZnO TFT for being annealed at different temperatures ( V DS = 5 V). (b) Transfer characteristics for the ZnO TFT and the SrZnO TFT (after being annealed at 250 °C, V DS = 5 V). (c) Output curves of the ZnO TFT (after annealing at 250 °C). (d) Output curves of SrZnO TFT (after being annealed at 250 °C). |
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