A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology
Zhang Li-Zhong, Wang Yuan†, Lu Guang-Yi, Cao Jian, Zhang Xing
       
Novel DST-gPiN device structure realized in P-substrate CMOS technology, showing (a) top view, (b) BB′ section view, and (c) CC′ section view.