Charge and spin-dependent thermal efficiency of polythiophene molecular junction in presence of dephasing
Golsanamlou Z.†, Bagheri Tagani M., Rahimpour Soleimani H.‡
       
Charge figure of merit in (a) parallel and (b) antiparallel configurations. (c) Spin figure of merit for P configuration versus gate voltage. T = 11 K and E f = 0.