Charge and spin-dependent thermal efficiency of polythiophene molecular junction in presence of dephasing |
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Golsanamlou Z.†
 , Bagheri Tagani M., Rahimpour Soleimani H.‡ |
| (a) Charge thermopower in P configuration versus gate voltage. The inset shows the charge thermopower in the AP configuration. (b) Spin thermopower as a function of gate voltage in P configuration, the inset shows the S s in AP one. (c) The charge magnetothermopower and inset shows the spin magnetothermopower versus gate voltage. T = 11 K and E f = 0. |
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