Charge and spin-dependent thermal efficiency of polythiophene molecular junction in presence of dephasing
Golsanamlou Z.†, Bagheri Tagani M., Rahimpour Soleimani H.‡
       
Electrical conductance in (a) P and (b) AP configurations, (c) spin conductance in P configuration, versus gate voltage. The inset of panel (c) shows G s in antiparallel alignment. T = 11 K and E f = 0.