Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate
Zhao Dan-Mei, Zhao De-Gang†, Jiang De-Sheng, Liu Zong-Shun, Zhu Jian-Jun, Chen Ping, Liu Wei, Li Xiang, Shi Ming
       
(a) Temperature dependences of PL spectra of sample A ranging from T = 8 K to 300 K, (b) the spectra in panel (a) with a magnified wavelength scale ranging from T = 8 K to 80 K, the inset in panel (b) shows the relationship between the peak position of SFs and temperature.