Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

Zhao Dan-Mei, Zhao De-Gang†, Jiang De-Sheng, Liu Zong-Shun, Zhu Jian-Jun, Chen Ping, Liu Wei, Li Xiang, Shi Ming

Logarithmic intensities of PL spectra of 3 GaN films at 8 K for (a) sample A, (b) sample B, (c) sample C.