Simulation of positron backscattering and implantation profiles using Geant4 code

Huang Shi-Juan^a),^b), Pan Zi-Wen^a),^b), Liu Jian-Dang^a),^b), Han Rong-Dian^a),^b), Ye Bang-Jiao†^a),^b)

The backscattering coefficients versus incident positron energy for graphite (a); for diamond (b); for Si (c); for Ge (d). Our simulation results (Geant4), MC. Makinen1992 and Exp. Makinen1992 (Ref. [ 24 ]), MC. Geant2008 (Ref. [ 19 ]).