Simulation of positron backscattering and implantation profiles using Geant4 code

Huang Shi-Juan^a),^b), Pan Zi-Wen^a),^b), Liu Jian-Dang^a),^b), Han Rong-Dian^a),^b), Ye Bang-Jiao†^a),^b)

The backscattering coefficients versus incident positron energy for Be (a); for Zn (b). Our simulation results (Geant4), Exp. Massoumi1991 (Ref. [ 33 ]), MC. Coleman and Exp. Coleman1992 (Ref. [ 23 ]), MC. Jensen1993 (Ref. [ 13 ]).