Simulation of positron backscattering and implantation profiles using Geant4 code

Huang Shi-Juan^a),^b), Pan Zi-Wen^a),^b), Liu Jian-Dang^a),^b), Han Rong-Dian^a),^b), Ye Bang-Jiao†^a),^b)

The backscattering coefficients versus incident positron energy for Al (a); for Cu (b); for Ag (c); for Au (d). Our simulation results (Geant4), Exp. Baker1988 (Ref. [ 20 ]), Exp. Coleman1992 (Ref. [ 23 ]), MC. VN1984 (Ref. [ 11 ]), MC. Jensen1993 (Ref. [ 13 ]), MC. Fernandez1995 (Ref. [ 32 ]), MC. Aydin2000 (Ref. [ 31 ]), MC. Jensen1990 (Ref. [ 12 ]), MC. Geant2008 (Ref. [ 19 ]), MC. Makinen1992 and Exp. Makinen1992 (Ref. [ 24 ]).