Simulation of positron backscattering and implantation profiles using Geant4 code

Huang Shi-Juan^a),^b), Pan Zi-Wen^a),^b), Liu Jian-Dang^a),^b), Han Rong-Dian^a),^b), Ye Bang-Jiao†^a),^b)

Comparison of our simulations and the experimental data for PS (a); for PMMA (b). Our simulation results (Geant4), Exp. Algers2003 (Ref. [ 25 ]), Exp. Palacio2009 (Ref. [ 26 ]).