Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3 thin films
Lu Zeng-Xinga), Song Xiaoa), Zhao Li-Naa), Li Zhong-Wena), Lin Yuan-Bina), Zeng Mina), Zhang Zhanga), Lu Xu-Binga), Wu Su-Juana), Gao Xing-Sen†a), Yan Zhi-Bob), Liu Jun-Ming‡b)
       
Resistive and ferroelectric polarization properties measured at 173 K: (a) I – V loops under three different bias sweep-rates of 1.5 V/s, 3 V/s, 6 V/s, respectively; (b) small voltage I – V curves measured at polarization downward and upward states after poling by pulsed voltages of ±14 V; (c) a comparison between I – V and saturated P – V curves; (d) variations of switched polarization (Δ P ) with pulse duration for different bias voltages, obtained by PUND testing. Here, OCV stands for open circuit voltage and PS represents the displacement transient current.