Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3 thin films
Lu Zeng-Xinga), Song Xiaoa), Zhao Li-Naa), Li Zhong-Wena), Lin Yuan-Bina), Zeng Mina), Zhang Zhanga), Lu Xu-Binga), Wu Su-Juana), Gao Xing-Sen†a), Yan Zhi-Bob), Liu Jun-Ming‡b)
       
Room temperature resistive switching properties for a BFO capacitor: (a) I – V curves with different maximum bias voltages. Arrows indicate the sweep sequence, and the inset shows schematic diagram for the device structure for electrical characterizations; (b) semi-logarithmic I – V curves; (c) loop of conductive current versus written pulse voltage, measured at 3 V, showing memristor behaviors, which is also compared with a saturated P – V loop; (d) resistive switching retention against logarithmic time. The two resistance states ( R H and R L) are read at 3 V which is previously polarized downwards (upwards) by applying 20-ms-pulse voltage of ± 14 V. The blue dots represent the On/Off resistance ratio ( R H/ R L) against retention time.