Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

Wang Shuan-Hu†^a), Zhang Xu^a), Zou Lv-Kuan^a), Zhao Jing^a), Wang Wen-Xin^a),^b), Sun Ji-Rong^a)

Equivalent electrical circuit simulating Ta/p-Si structure when the illumination spot is connected to the negative (a) or positive (b) pole of power supply. Solid (blue) and dotted (green) arrows represent the current injected by external power supply and the photocurrent, respectively; (c) the I – V curves in n-Si with and without the light incident on the Al/Si contact.