Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

Wang Shuan-Hu†^a), Zhang Xu^a), Zou Lv-Kuan^a), Zhao Jing^a), Wang Wen-Xin^a),^b), Sun Ji-Rong^a)

I – V characteristic curves of (a) Ta/p-Si junction and (b) t/n-Si under laser illumination at different intensities; (c) and (d) the equivalent electrical circuits when Ta is connected to the negative or positive electrode of power supply, where the solid (blue) arrow shows the injected current by external power, and the dotted (green) arrow represents the photocurrent.