Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

Wang Shuan-Hu†^a), Zhang Xu^a), Zou Lv-Kuan^a), Zhao Jing^a), Wang Wen-Xin^a),^b), Sun Ji-Rong^a)

(a) and (b) I – V characteristic curves of the metallic film on Ta/p-Si and Pt/n-Si under varying illumination powers; (c) and (d) differential resistance calculated based on the data of panels (a) and (b); (e) and (f) I – V characteristic curves of the silicon substrate of Ta/p-Si and Pt/n-Si.