Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

Wang Shuan-Hu†^a), Zhang Xu^a), Zou Lv-Kuan^a), Zhao Jing^a), Wang Wen-Xin^a),^b), Sun Ji-Rong^a)

(a) Sketch of the experimental setup, where two electrodes A and B on the film are used for injection and two probes C and D on the silicon substrate are used to detect the electric potential variation; (b) the band structure of p-type and n-type Schottky junction; (c) I – V curve of Al/Si contact.