Fermi level pinning effects at gate–dielectric interfaces influenced by interface state densities
Hong Wen-Ting, Han Wei-Hua†, Lyu Qi-Feng, Wang Hao, Yang Fu-Hua
       
Effective work functions of ploycrystalline silicon gate, metal gate, and metal silicide gate on various dielectric layers versus the relative permittivity of dielectric with D m = D Si ∼ 1023/eV·cm3 and D dm = D dSi ∼ 1021/eV·cm3.