Fermi level pinning effects at gate–dielectric interfaces influenced by interface state densities

Hong Wen-Ting, Han Wei-Hua†, Lyu Qi-Feng, Wang Hao, Yang Fu-Hua

(a) Pinning factors of metal S _m versus interface state density D _dm for different values of D _m. The large D _dm enables S _m to be pinned at zero. (b) Effective work functions versus vacuum metal work function for different values of D _dm. The smaller S _m leads to more pinning of ϕ _m,eff to ϕ _cnl,d, as plotted in the ϕ _m,eff– ϕ _m diagram.