Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array
Wang Xiao-Boa), b) , Li Yongc) , Yan Ling-Linga) , Li Xin-Jian†a) 
Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array |
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Wang Xiao-Bo
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| FESEM images of (a) GaN/Si-NPA and (b) an individual pillar of GaN/Si-NPA taken by tilting the sample at an angle of 60°. (c) TEM image of a piece of GaN/Si-NPA cleaved from the upper layer of a sample and (d) high-resolution TEM image of the marked region in panel (c). |
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