Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H–SiC contacts
Cheng Yue, Zhao Gao-Jie, Liu Yi-Hong, Sun Yu-Jun, Wang Tao, Chen Zhi-Zhan†
Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H–SiC contacts |
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Cheng Yue, Zhao Gao-Jie, Liu Yi-Hong, Sun Yu-Jun, Wang Tao, Chen Zhi-Zhan†
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| (a) Cross-sectional TEM micrograph of the Si/Ta/Ti/4H–SiC contact (3R600-24). The sample is annealed at 600 °C for 2 min in Ar atmosphere and then aged at 600 °C for 24 h in air, (b) a linear scanning analysis of the 3R600-24 to display the composition distribution of a selected observation distance. |
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