Mechanical strains in pecvd SiN x:H films for nanophotonic application
Semenova O.†a) 
, Kozelskaya A.b) , Zhi-Yong Lic) , Yu-De Yuc)
, Kozelskaya A.
Mechanical strains in pecvd SiN x:H films for nanophotonic application |
|
Semenova O.†
, Kozelskaya A. |
| Variation of N–H concentration with temperature of a silicon nitride film as a result of annealing. Film is deposited at 160 °C and plasma frequency of 40.68 MHz. |
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