Mechanical strains in pecvd SiN
x
:H films for nanophotonic application
Semenova O.†
a)
, Kozelskaya A.
b)
, Zhi-Yong Li
c)
, Yu-De Yu
c)
Variations of stress with temperature of SiN
x
:H films, grown at 16 °C, through heating and subsequent cooling in Ar atmosphere.