Mechanical strains in pecvd SiN
x
:H films for nanophotonic application
Semenova O.†
a)
, Kozelskaya A.
b)
, Zhi-Yong Li
c)
, Yu-De Yu
c)
(a) Variations of refractive index n and (b) N–H and Si–H bond concentrations with power density of HF discharge for the films deposited at 160 °C.