Mechanical strains in pecvd SiN
x
:H films for nanophotonic application
Semenova O.†
a)
, Kozelskaya A.
b)
, Zhi-Yong Li
c)
, Yu-De Yu
c)
IR absorption spectra of SiN
x
:H films grown at 160 °C on Ge prisms and power densities of 0.05 (curve a ), 0.1 (curve b ), 0.2 (curve c ), and 0.27 (curve d ) W/cm
2
.