Mechanical strains in pecvd SiN x:H films for nanophotonic application
Semenova O.†a), Kozelskaya A.b), Zhi-Yong Lic), Yu-De Yuc)
       
IR absorption spectra of SiN x :H films grown at 160 °C on Ge prisms and power densities of 0.05 (curve a ), 0.1 (curve b ), 0.2 (curve c ), and 0.27 (curve d ) W/cm2.