Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET
Danković Danijel†a), Stojadinović Ninoslava), Prijić Zorana), Manić Ivicaa), Davidović Vojkana), Prijić Anetaa), Djorić-Veljković Snežanab), Golubović Snežanaa)
       
Threshold voltage shifts during the 4-step sequence of pulsed NBT stressing ( V G = −45 V, T = 175 °C, f = 8.00 kHz) at different duty cycles.